A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .-A-8.6 x 1011/cm2, p typeB-8.6 x 1011/cm2, n typeC-0.86 x 109/cm2, p typeD-1.02 x 1012/cm2, n type-A-8.6 x 1011/cm2, p type

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A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [&epsilon;r = 3.9; &epsilon;0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .-A-8.6 x 1011/cm2, p typeB-8.6 x 1011/cm2, n typeC-0.86 x 109/cm2, p typeD-1.02 x 1012/cm2, n type-A-8.6 x 1011/cm2, p type

APTITUDE CRACK · Accepted Answer

A 8.6 x 1011/cm2, p type  VT(new) = VT(odd) + = 6.903 x 10 8 ∴ ∴ fB = 8.6 x 1011 The threshold voltage is always negative for p channel and hence implant is of p type.

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A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .

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