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Q1: A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .

A 8.6 x 1011/cm2, p-type

B 8.6 x 1011/cm2, n-type

C 0.86 x 109/cm2, p-type

D 1.02 x 1012/cm2, n-type

ANS:A - 8.6 x 1011/cm2, p-type

VT(new) = VT(odd) + = 6.903 x 10-8 ∴ ∴ fB = - 8.6 x 1011 The threshold voltage is always negative for p-channel and hence implant is of p-type.



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