A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.-A-30 pAB-40 pAC-50 pAD-60 pA-B-40 pA

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A silicon (PN) junction at a temperature of 20&deg;C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40&deg;C for the same bias is approximately.-A-30 pAB-40 pAC-50 pAD-60 pA-B-40 pA

APTITUDE CRACK · Accepted Answer

B 40 pA By increasing of temperature by 10&deg;C, Io become double so by increasing temperature 20&deg;C, Io become 4 time than initial value... and it is 40 PA.

Electronic Devices and Circuits - Engineering

A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

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Electronic Devices and Circuits - Engineering

A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

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For help Students Orientation Mcqs Questions

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Mcqs Questions