A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is-A-100 μFB-10 μFC-1 μFD-20 μF-B-10 μF

Question

A silicon PN junction diode under reverse bias has depletion region of width 10 &mu;m. The relative permittivity of silicon, &epsilon;r = 11.7 and the permittivity of free space &epsilon;0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is-A-100 &mu;FB-10 &mu;FC-1 &mu;FD-20 &mu;F-B-10 &mu;F

APTITUDE CRACK · Accepted Answer

B 10 &mu;F No answer description is available.

Analog Electronics - Engineering

A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, ε_r = 11.7 and the permittivity of free space ε₀ = 8.85 x 10^-12 F/m. The depletion capacitance of the diode per square meter is

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Analog Electronics - Engineering

A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is

Solution

For help Students Orientation Mcqs Questions

A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, ε_r = 11.7 and the permittivity of free space ε₀ = 8.85 x 10^-12 F/m. The depletion capacitance of the diode per square meter is

For help Students Orientation
Mcqs Questions