A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is-A-3B-1/3C-2/3D-3/2-B-1/3

Question

APTITUDE CRACK · Accepted Answer

B 1/3 No answer description is available.

Analog Electronics - Engineering

A silicon sample A is doped with 10¹⁸ Atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

For help Students Orientation
Mcqs Questions

Quick Links

Newsletter

Analog Electronics - Engineering

A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

Solution

For help Students Orientation Mcqs Questions

A silicon sample A is doped with 10¹⁸ Atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

For help Students Orientation
Mcqs Questions