Electronic Devices and Circuits - Engineering

Q1:

An n channel depletion type MOSFET has

A lightly doped p substrate and highly doped n source and drain

B highly doped p substrate and highly doped n source and drain

C highly doped p substrate and lightly doped n source and drain

D lightly doped n substrate and highly doped n source and drain

ANS:A - lightly doped p substrate and highly doped n source and drain

No answer description is available.