- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16


Electronic Devices and Circuits - Engineering
Q1: Assertion (A): A p-n junction has high resistance in reverse direction. Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.A Both A and R are true and R is correct explanation of A
B Both A and R are true but R is not a correct explanation of A
C A is true but R is false
D A is false but R is true
ANS:A - Both A and R are true and R is correct explanation of A The increase in reverse resistance is due to widening of depletion layer. |


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