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Electronic Devices and Circuits

Q1: Consider the following statements: The function of oxide layer in an IC device is to
  1. mask against diffusion or non implant
  2. insulate the surface electrically
  3. increase the melting point of silicon
  4. produce a chemically stable protective layer
Of these statements:

A 1, 2, 3 are correct

B 1, 3, 4 are correct

C 2, 3, 4 are correct

D 1, 2, 4 are correct

ANS:D - 1, 2, 4 are correct

Oxide layer cannot have any effect on melting point of silicon. Moreover before melting silicon breaks down.



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