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Electronic Devices and Circuits

Q1: EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

A more number of electron-hole pairs will be generated in silicon than in germanium at room temperature

B less number of electron hole pairs will be generated in silicon than in germanium at room temperature

C equal number of electron-hole pairs will be generated in both at lower temperatures

D equal number of electron-hole pairs will be generated in both at higher temperatures

ANS:B - less number of electron hole pairs will be generated in silicon than in germanium at room temperature

No answer description is available.



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