- Electronic Devices and Circuits - Section 1
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Electronic Devices and Circuits - Engineering
Q1: EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded thatA more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
B less number of electron hole pairs will be generated in silicon than in germanium at room temperature
C equal number of electron-hole pairs will be generated in both at lower temperatures
D equal number of electron-hole pairs will be generated in both at higher temperatures
ANS:B - less number of electron hole pairs will be generated in silicon than in germanium at room temperature No answer description is available. |


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