EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that-A-more number of electron hole pairs will be generated in silicon than in germanium at room temperatureB-less number of electron hole pairs will be generated in silicon than in germanium at room temperatureC-equal number of electron hole pairs will be generated in both at lower temperaturesD-equal number of electron hole pairs will be generated in both at higher temperatures-B-less number of electron hole pairs will be generated in silicon than in germanium at room temperature

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B less number of electron hole pairs will be generated in silicon than in germanium at room temperature No answer description is available.

Electronic Devices and Circuits

E_G for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

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Electronic Devices and Circuits

EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

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For help Students Orientation Mcqs Questions

E_G for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

For help Students Orientation
Mcqs Questions