Download Aptitude Crack
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Electronic Devices and Circuits - Engineering

Q1:

Epitaxial growth is used in ICs

A because it produces low parasitic capacitance

B because it yields back to back isolating pn Junction

C to grow single crystal n doped silicon on a single crystal P-type substrate

D to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity

ANS:D - to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity

No answer description is available.