- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16


Electronic Devices and Circuits - Engineering
Q1: In a bipolar transistorA recombination in base regions of both n-p-n and p-n-p transistor is low
B recombination in base regions of both n-p-n and p-n-p transistors is high
C recombination in base region of n-p-n transistor is low but that in p-n-p transistor is high
D recombination in base region of p-n-p transistor is low but that in n-p-n transistor is high
ANS:A - recombination in base regions of both n-p-n and p-n-p transistor is low Base is very thin and therefore recombination is minimum in both p-n-p and n-p-n transistors. |


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