- Analog Electronics - Section 1
- Analog Electronics - Section 2
- Analog Electronics - Section 3
- Analog Electronics - Section 4
- Analog Electronics - Section 5
- Analog Electronics - Section 6
- Analog Electronics - Section 7
- Analog Electronics - Section 8
- Analog Electronics - Section 9
- Analog Electronics - Section 10
- Analog Electronics - Section 11
- Analog Electronics - Section 12
- Analog Electronics - Section 13
- Analog Electronics - Section 14
- Analog Electronics - Section 15
- Analog Electronics - Section 16
- Analog Electronics - Section 17
- Analog Electronics - Section 18
- Analog Electronics - Section 19
- Analog Electronics - Section 20
- Analog Electronics - Section 21


Analog Electronics - Engineering
Q1: In a P-N-P junction transistor as compared to base region is more heavily doped so thatA
leakage current is minimized
B recombination will be increased in the base region
C
the flow across the base regional is only because of electrons
D
the flow across the base region is mainly because of holes
ANS:D - the flow across the base region is mainly because of holes No answer description is available. |


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