Electronic Devices and Circuits - Engineering

Q1:

In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is

A zero

B 1010/cm3

C 105/cm3

D 1.5 x 1025/cm3

ANS:C - 105/cm3

Electron concentration .