In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then-A-pn pno = nn nnoB-pn + pno = nn + nnoC-pn pno = nno + nnoD-pn + pno = nn pno-A-pn pno = nn nno

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A pn pno = nn nno Since the specimen is subjected to radiation, recombination occurs leading to decrease in concentration.

Electronic Devices and Circuits - Engineering

In a specimen of n type semiconductor, the initial concentration of holes and electrons is p_no and n_no. When the specimen is subjected to radiation, the hole and electron concentration increase to p_n and n_n. Then

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Electronic Devices and Circuits - Engineering

In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then

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For help Students Orientation Mcqs Questions

In a specimen of n type semiconductor, the initial concentration of holes and electrons is p_no and n_no. When the specimen is subjected to radiation, the hole and electron concentration increase to p_n and n_n. Then

For help Students Orientation
Mcqs Questions