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Electronic Devices and Circuits - Engineering

Q1:

In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

A E > B > C

B B > C > E

C C > E > B

D C = E = B

ANS:A - E > B > C

Less doping on B but size is too small than C so concentration is high.