Electronic Devices and Circuits - Engineering

Q1:

In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about

A 15 x 104 per cm3

B 5 x 1012 per cm3

C 1.45 x 1010 per cm3

D 1.45 x 106 per cm3

ANS:C - 1.45 x 1010 per cm3

No answer description is available.