In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is-A-P+ dopedB-n+ dopedC-used to reduce the parasitic capacitanceD-located in the emitter region-C-used to reduce the parasitic capacitance

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C used to reduce the parasitic capacitance Which is the correct answer B or C?

Electronic Devices and Circuits - Engineering

In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

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Electronic Devices and Circuits - Engineering

In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

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For help Students Orientation Mcqs Questions

For help Students Orientation
Mcqs Questions