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Q1:

In the following transistor circuit VBE = 0. 7 V, rc = 25mV/IE, and β and the capacitance are very large

The value of DC current IE is

A 1 mA

B 2 mA

C 5 mA

D 10 mA

ANS:A - 1 mA

Design is independent of IB as β is very high IB ∼ 0 Thus applying Kirchhoff's law is base emitter, we get.



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