Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon-A-goes down by 0.13 eVB-goes up by 0.13 eVC-goes down by 0.427 eVD-goes up by 0.427 eV-C-goes down by 0.427 eV

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Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of  to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon-A-goes down by 0.13 eVB-goes up by 0.13 eVC-goes down by 0.427 eVD-goes up by 0.427 eV-C-goes down by 0.427 eV

APTITUDE CRACK · Accepted Answer

The correct option is  C goes down by 0.427 eV  Use EF Ev = Since it is doped with acceptor impurity, Fermi level will shift down.

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Silicon is doped with boron to a concentration of 4 x 10¹⁷ atoms/cm³. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 10¹⁰/cm³ and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

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Q1: Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

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Q1:
Silicon is doped with boron to a concentration of 4 x 10¹⁷ atoms/cm³. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 10¹⁰/cm³ and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

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