- Chemical Engineering Basics - Section 1
- Chemical Engineering Basics - Section 2
- Chemical Engineering Basics - Section 3
- Chemical Engineering Basics - Section 4
- Chemical Engineering Basics - Section 5
- Chemical Engineering Basics - Section 6
- Chemical Engineering Basics - Section 7
- Chemical Engineering Basics - Section 8
- Chemical Engineering Basics - Section 9
- Chemical Engineering Basics - Section 10
- Chemical Engineering Basics - Section 11
- Chemical Engineering Basics - Section 12
- Chemical Engineering Basics - Section 13
- Chemical Engineering Basics - Section 14
- Chemical Engineering Basics - Section 15
- Chemical Engineering Basics - Section 16
- Chemical Engineering Basics - Section 17
- Chemical Engineering Basics - Section 18
- Chemical Engineering Basics - Section 19
- Chemical Engineering Basics - Section 20
- Chemical Engineering Basics - Section 21
- Chemical Engineering Basics - Section 22
- Chemical Engineering Basics - Section 23
- Chemical Engineering Basics - Section 24
- Chemical Engineering Basics - Section 25
- Chemical Engineering Basics - Section 26
- Chemical Engineering Basics - Section 27
- Chemical Engineering Basics - Section 28


Chemical Engineering Basics - Engineering
Q1: The majority charge carriers in p-type silicon areA free electrons
B ions
C conduction electrons
D holes
ANS:D - holes The majority charge carriers in p-type silicon are holes. In p-type semiconductors such as p-type silicon, the dominant charge carriers are positively charged "holes." These holes are essentially vacancies in the valence band created by the introduction of acceptor impurities (e.g., boron) into the silicon crystal lattice. When an electron from a neighboring atom jumps into one of these vacancies to fill it, it leaves behind another hole, effectively allowing the movement of positive charge through the material. This movement of holes is responsible for the electrical conductivity in p-type semiconductors. |


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