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Bipolar Junction Transistors (BJT)

Q1:

When a silicon diode is forward biased, what is VBE for a C-E configuration?

A voltage-divider bias

B 0.4 V

C 0.7 V

D emitter voltage

ANS:C - 0.7 V

Silicon requires minimum 0.7 Volt(knee voltage) for conduction in forward biased due to depletion region and so base to emitter voltage should be 0.7 Volt in C-E configuration.



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