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Electronic Devices and Circuits

Q1:

Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

A ni(T) = (A/T) exp (- E8/kT2)

B ni(T) = A (- E8/2kT)10

C ni(T) = A exp (- E8/2kT2)

D ni(T) = AT3/2 exp (-E8/2kT)

ANS:D - ni(T) = AT3/2 exp (-E8/2kT)

No answer description is available.



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