Semiconductor Memory

Q1: Memory that loses its contents when power is lost is:

A nonvolatile

B volatile

C random

D static

Q2: Advantage(s) of an EEPROM over an EPROM is (are):

A the EPROM can be erased with ultraviolet light in much less time than an EEPROM

B the EEPROM can be erased and reprogrammed without removal from the circuit

C the EEPROM has the ability to erase and reprogram individual words

D the EEPROM can erase and reprogram individual words without removal from the circuit

Q3: Select the best description of read-only memory (ROM).

A nonvolatile, used to store information that changes during system operation

B nonvolatile, used to store information that does not change during system operation

C volatile, used to store information that changes during system operation

D volatile, used to store information that does not change during system operation

Q4: A computerized self-diagnostic for a ROM test uses:

A the check-sum method

B a ROM listing

C ROM comparisons

D a checkerboard test

Q5: Which of the following memories uses a MOSFET and a capacitor as its memory cell?

A SRAM

B DRAM

C ROM

D DROM

Q6: The access time (tacc) of a memory IC is governed by the IC's:

A internal address buffer

B internal address decoder

C volatility

D internal address decoder and volatility

Q7: Select the best description of the fusible-link PROM.

A user programmable, one-time programmable

B manufacturer programmable, one-time programmable

C user programmable, reprogrammable

D manufacturer programmable, reprogrammable

Q8: Which of the following best describes static memory devices?

A memory devices that are magnetic in nature and do not require constant refreshing

B semiconductor memory devices in which stored data is retained as long as power is applied

C memory devices that are magnetic in nature and require constant refreshing

D semiconductor memory devices in which stored data will not be retained with the power applied unless constantly refreshed

Q9: Which of the following RAM timing parameters determine(s) its operating speed?

A
tacc

B
taa and tacs

C
t1 and t3

D
trc and twc

Q10: What is the principal advantage of using address multiplexing with DRAM memory?

A reduced memory access time

B reduced requirement for constant refreshing of the memory contents

C reduced pin count and decrease in package size

D no requirement for a chip-select input line, thereby reducing the pin count

Q11: How many storage locations are available when a memory device has twelve address lines?

A 144

B 512

C 2048

D 4096

Q12: Which of the following best describes nonvolatile memory?

A memory that retains stored information when electrical power is removed

B memory that loses stored information when electrical power is removed

C magnetic memory

D nonmagnetic memory

Q13: A nonvolatile type of memory that can be programmed and erased in sectors, rather than one byte at a time is:

A flash memory

B EPROM

C EEPROM

D MPROM


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