Field Effect Transistors (FET)

Q1: A MOSFET has how many terminals?

A
2 or 3

B
3

C
4

D
3 or 4

Q2: In an n-channel JFET, what will happen at the pinch-off voltage?

A
the value of VDS at which further increases in VDS will cause no further increase in ID

B
the value of VGS at which further decreases in VGS will cause no further increases in ID

C
the value of VDG at which further decreases in VDG will cause no further increases in ID

D
the value of VDS at which further increases in VGS will cause no further increases in ID

Q3: Which type of JFET bias requires a negative supply voltage?

A
feedback

B
source

C
gate

D
voltage divider

Q4: When not in use, MOSFET pins are kept at the same potential through the use of:

A
shipping foil

B
nonconductive foam

C
conductive foam

D
a wrist strap

Q5: Which JFET configuration would connect a high-resistance signal source to a low-resistance load?

A
source follower

B
common-source

C
common-drain

D
common-gate

Q6: With the E-MOSFET, when gate input voltage is zero, drain current is:

A
at saturation

B
zero

C
IDSS

D
widening the channel

Q7: With a JFET, a ratio of output current change against an input voltage change is called:

A
transconductance

B
siemens

C
resistivity

D
gain

Q8: The transconductance curve of a JFET is a graph of:

A
IS versus VDS

B
IC versus VCE

C
ID versus VGS

D
ID × RDS

Q9: IDSS can be defined as:

A
the minimum possible drain current

B
the maximum possible current with VGS held at –4 V

C
the maximum possible current with VGS held at 0 V

D
the maximum drain current with the source shorted

Q10: When is a vertical channel E-MOSFET used?

A
for high frequencies

B
for high voltages

C
for high currents

D
for high resistances

Q11: Which component is considered to be an "OFF" device?

A
transistor

B
JFET

C
D-MOSFET

D
E-MOSFET

Q12: When VGS = 0 V, a JFET is:

A
saturated

B
an analog device

C
an open switch

D
cut off

Q13: Which component is considered to be an "OFF" device?

A
transistor

B
JFET

C
D-MOSFET

D
E-MOSFET

Q14: What is the transconductance of an FET when ID = 1 mA and VGS = 1 V?

A
1 kS

B
1 mS

C
1 k

D
1 m

Q15: A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:

A
gate

B
block

C
drain

D
heat sink

Q16: A very simple bias for a D-MOSFET is called:

A
self biasing

B
gate biasing

C
zero biasing

D
voltage-divider biasing

Q17: The type of bias most often used with E-MOSFET circuits is:

A
constant current

B
drain-feedback

C
voltage-divider

D
zero biasing

Q18: Junction Field Effect Transistors (JFET) contain how many diodes?

A
4

B
3

C
2

D
1

Q19: The common-source JFET amplifier has:

A
a very high input impedance and a relatively low voltage gain

B
a high input impedance and a very high voltage gain

C
a high input impedance and a voltage gain less than 1

D
no voltage gain

Q20: JFET terminal "legs" are connections to the drain, the gate, and the:

A
channel

B
source

C
substrate

D
cathode

Q21: The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected:

A
in parallel

B
with separate insulation

C
with separate inputs

D
in series

Q22: How will a D-MOSFET input impedance change with signal frequency?

A
As frequency increases input impedance increases.

B
As frequency increases input impedance is constant.

C
As frequency decreases input impedance increases.

D
As frequency decreases input impedance is constant.

Q23: When an input signal reduces the channel size, the process is called:

A
enhancement

B
substrate connecting

C
gate charge

D
depletion

Q24: With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA?

A
6 V

B
10 V

C
24 V

D
30 V

Q25: When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = , resistance D to SS = and 500 , depending on the polarity of the ohmmeter, and resistance D to S = 500 . What is wrong?

A
short D to S

B
open G to D

C
open D to SS

D
nothing

Q26: Using voltage-divider biasing, what is the voltage at the gate VGS?

mcq13_1010_1.gif

A
5.2 V

B
4.2 V

C
3.2 V

D
2.2 V

Q27: D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of:

A
low output impedance

B
capacitive reactance

C
high input impedance

D
inductive reactance

Q28: What is the input impedance of a common-gate configured JFET?

A
very low

B
low

C
high

D
very high

Q29: When the JFET is no longer able to control the current, this point is called the:

A
breakdown region

B
depletion region

C
saturation point

D
pinch-off region

Q30: When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain current delta?

A
666 mA

B
3 mA

C
0.75 mA

D
0.5 mA

Q31: When applied input voltage varies the resistance of a channel, the result is called:

A
saturization

B
polarization

C
cutoff

D
field effect

Q32: How will electrons flow through a p-channel JFET?

A
from source to drain

B
from source to gate

C
from drain to gate

D
from drain to source


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