Semiconductor Principles

Q1: Silicon atoms combine into an orderly pattern called a:

A
covalent bond

B
crystal

C
semiconductor

D
valence orbit

Q2: Solid state devices were first manufactured during:

A
World War 2

B
1904

C
1907

D
1960

Q3: What is a type of doping material?

A
extrinsic semiconductor material

B
pentavalent material

C
n-type semiconductor

D
majority carriers

Q4: In "n" type material, majority carriers would be:

A
holes

B
dopants

C
slower

D
electrons

Q5: Which of the following cannot actually move?

A
majority carriers

B
ions

C
holes

D
free electrons

Q6: What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

A
conductivity

B
resistance

C
power

D
all of the above

Q7: A P-N junction mimics a closed switch when it:

A
has a low junction resistance

B
is reverse biased

C
cannot overcome its barrier voltage

D
has a wide depletion region

Q8: How many valence electrons are in every semiconductor material?

A
1

B
2

C
3

D
4

Q9: What is the most significant development in electronics since World War II?

A
the development of color TV

B
the development of the diode

C
the development of the transistor

D
the development of the TRIAC

Q10: Ionization within a P-N junction causes a layer on each side of the barrier called the:

A
junction

B
depletion region

C
barrier voltage

D
forward voltage

Q11: What is the voltage across R1 if the P-N junction is made of silicon?

A
12 V

B
11.7 V

C
11.3 V

D
0 V

Q12: Minority carriers are many times activated by:

A
heat

B
pressure

C
dopants

D
forward bias

Q13: In "n" type material, majority carriers would be:

A
holes

B
dopants

C
slower

D
electrons

Q14: When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

A
energy gap

B
hole

C
electron-hole pair

D
recombination

Q15: What causes the depletion region?

A
doping

B
diffusion

C
barrier potential

D
ions

Q16: Which semiconductor material is made from coal ash?

A
germanium

B
silicon

C
tin

D
carbon

Q17: In "n" type material, majority carriers would be:

A
holes

B
dopants

C
slower

D
electrons

Q18: When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

A
1949, William Schockley

B
1955, Walter Bratten

C
1959, Robert Noyce

D
1960, John Bardeen

Q19: A commonly used pentavalent material is:

A
arsenic

B
boron

C
gallium

D
neon

Q20: If conductance increases as temperature increases, this is known as a:

A
positive coefficient

B
negative current flow

C
negative coefficient

D
positive resistance

Q21: In "p" type material, minority carriers would be:

A
holes

B
dopants

C
slower

D
electrons

Q22: Elements with 1, 2, or 3 valence electrons usually make excellent:

A
conductors

B
semiconductors

C
insulators

D
neutral

Q23: Electron pair bonding occurs when atoms:

A
lack electrons

B
share holes

C
lack holes

D
share electrons

Q24: Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

A
0.2

B
0.3

C
0.7

D
0.8

Q25: What is an energy gap?

A
the space between two orbital shells

B
the energy equal to the energy acquired by an electron passing a 1 V electric field

C
the energy band in which electrons can move freely

D
an energy level at which an electron can exist

Q26: Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

A
1

B
2

C
4

D
6

Q27: When is a P-N junction formed?

A
in a depletion region

B
in a large reverse biased region

C
the point at which two opposite doped materials come together

D
whenever there is a forward voltage drop


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