Download Aptitude Crack
img not found img not found

Field Effect Transistors (FET)

Q1: IDSS can be defined as:

A the minimum possible drain current

B the maximum possible current with VGS held at –4 V

C the maximum possible current with VGS held at 0 V

D the maximum drain current with the source shorted

ANS:C - the maximum possible current with VGS held at 0 V

IDSS (referred to as the drain current for zero bias) is the maximum current that flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0V.



img not found
img

For help Students Orientation
Mcqs Questions

One stop destination for examination, preparation, recruitment, and more. Specially designed online test to solve all your preparation worries. Go wherever you want to and practice whenever you want, using the online test platform.