Field Effect Transistors (FET) - Technical MCQs
Q1: IDSS can be defined as:A
the minimum possible drain current
B
the maximum possible current with VGS held at –4 V
C
the maximum possible current with VGS held at 0 V
D
the maximum drain current with the source shorted
ANS:C - the maximum possible current with VGS held at 0 V IDSS (referred to as the drain current for zero bias) is the maximum current that flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0V. |
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