In a reactance FET, gm = 9 x 10-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is-A-1000 ΩB-1/1000 ΩC-36 x 103 ΩD- x 103 Ω-A-1000 Ω

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In a reactance FET, gm = 9 x 10-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is-A-1000 &Omega;B-1/1000 &Omega;C-36 x 103 &Omega;D- x 103 Ω-A-1000 &Omega;

APTITUDE CRACK · Accepted Answer

The correct option is  A 1000 &Omega;  .

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Q1: In a reactance FET, g_m = 9 x 10^-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is

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Communication Systems

Q1: In a reactance FET, gm = 9 x 10-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is

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For help Students Orientation Mcqs Questions

Q1: In a reactance FET, g_m = 9 x 10^-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is

For help Students Orientation
Mcqs Questions