The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

ANS:B - False

For silicon it is 0.7 and germanium it is 0.3 because, for silicon the energy gap is 1.1ev, i.e the valency band and conduction band gap is 1.21ev.

Hence in order to move the electron from valency band to conduction bad we need large amount of energy in any form. If it is voltage then it require 0.7v.

And for germanium, the energy gap is 0.78ev. Hence campare to silicon it is less gap. Hence less amount of energy is required that is 0.3v.